Part Number
|
GE200NB60S |
Manufacturer
|
ST Microelectronics |
Description
|
N-CHANNEL IGBT |
Published
|
Feb 1, 2007 |
Detailed Description
|
com
STGE200NB60S
N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT
General features
TYPE VCES VCE...
|
Datasheet
|
GE200NB60S
|
Overview
com
STGE200NB60S
N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT
General features
TYPE VCES VCE(sat) (typ.
) 1.
2V 1.
3V IC 150A 200A TC 100°C 25°C
STGE200NB60S 600V
■ ■ ■ ■ ■
High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
Internal schematic diagram
Applications
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Low ...
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