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GE200NB60S

ST Microelectronics
Part Number GE200NB60S
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Feb 1, 2007
Detailed Description www.DataSheet4U.com STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE...
Datasheet PDF File GE200NB60S PDF File

GE200NB60S
GE200NB60S

Overview
www.
DataSheet4U.
com STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE(sat) (typ.
) 1.
2V 1.
3V IC 150A 200A TC 100°C 25°C STGE200NB60S 600V ■ ■ ■ ■ ■ High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
Internal schematic diagram Applications ■ ■ Low ...


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