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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF5S21130/D
MRF5S21130 RF Power Field Effect
Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line
t i o n s .
To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.
84 MHz, Adjacent Channels Measured over 3.
84 MHz BW @ f1 –5 MHz and f...