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MRF5S21130HSR3

Part Number	MRF5S21130HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Oct 18, 2008
Detailed Description	Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhan...
Datasheet	MRF5S21130HSR3 PDF File

Overview

Freescale Semiconductor Technical Data MRF5S21130H Rev.
3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 13.
5 dB Efficiency — 26% IM3 @ 10 MHz Offset — - 37 dBc in 3.
84 MHz Channel Bandwidt...

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MRF5S21130HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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