Part Number
|
IRFP2907B |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Feb 9, 2007 |
Detailed Description
|
www.DataSheet4U.com
PD - 93777
IRFC2907B
HEXFET®
l
Power MOSFET Die in Wafer Form
D
100% Tested at Probe l Available...
|
Datasheet
|
IRFP2907B
|
Overview
www.
DataSheet4U.
com
PD - 93777
IRFC2907B
HEXFET®
l
Power MOSFET Die in Wafer Form
D
100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Electrical Characteristics *
Parameter V(BR)DSS RDS(on)*** VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range
G S
75V RDS(on) = 2.
5mΩ (typ.
)∗∗∗ 6" Wafer
Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V
Min Typ.
Max 75V ––– ––...
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