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IRFP2907B

International Rectifier
Part Number IRFP2907B
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Feb 9, 2007
Detailed Description www.DataSheet4U.com PD - 93777 IRFC2907B HEXFET® l Power MOSFET Die in Wafer Form D 100% Tested at Probe l Available...
Datasheet PDF File IRFP2907B PDF File

IRFP2907B
IRFP2907B

Overview
www.
DataSheet4U.
com PD - 93777 IRFC2907B HEXFET® l Power MOSFET Die in Wafer Form D 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Electrical Characteristics * Parameter V(BR)DSS RDS(on)*** VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.
5mΩ (typ.
)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V Min Typ.
Max 75V ––– ––...


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