2N6792

2N6790 : 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit. Features • 3.5A, 200V • rDS(ON) = 0.800Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6790 PACKAGE TO-205AF BRAND .

2N6790 : .

2N6790 : These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6788 and 2N6790 number. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555. • RoHS compliant versions available (commercial grade only). • High frequency operation. • Lightweight package. • ESD rated to class 1A. APPLICATIONS / BENEFITS MAXIMUM RATINGS @ TC = +25 °C unless otherwise noted TO-20.

2N6790U : These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 numbers. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555. • RoHS compliant by design. APPLICATIONS / BENEFITS • High frequency operation. • Lightweight, low-profile package. • ESD rated to class 1A. MAXIMUM RATINGS @ TC = +25 °C unless otherwise note.

2N6792 : Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China JANTX(V)2N6792 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source contravariance. 4. Quality Class: GS, G. TECHNICAL DATA: Parameter name Drain-Source Voltage Drain Current Total Power Dissipation Gate-Source Voltage Junction Temperature Storage Temperature Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Curr.

2N6794 : 2N6794 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N–CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. BVDSS ID(cont) RDS(on) 500V 1.5 3.0Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 – Package (TO-205AF) Underside View Pin 1 – Source Pin 2 – Gate Pin 3 – Drain FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V.

2N6796 : 2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N – CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 8A • RDSON = 0.18Ω 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain–Source Voltage VDGR Drain–Gate Voltage (RGS = 1.0mΩ) VGS Gate.

2N6796 : 2N6796 Data Sheet November 1998 File Number 1594.2 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Features • 8A, 100V • rDS(ON) = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF.

2N6796 : This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Qualified Levels: JAN, JANTX, JANTXV and JANS* Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. • JAN, JANTX, and JANTXV qualifications are a.

2N6796LCC4 : 2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) ≈ 2.16 (0.085) N-CHANNEL POWER MOSFET VDSS = 100V = 7.4A 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 ID 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) RDS(ON) = 0.18Ω 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. FEATURES LCC4 CERAMIC SURFACE MOUNT PACKAGE Underside View Pads 6, 7, 8, 9, 10, 11, 12, 13. Pads 4,5 Pads 1,2,15,16,17,18 Pads 3,14 Source Gate Drain Not Connected • Hermetically sealed ceramic surface mount package • Small footprint • Simple drive requirements .

2N6798 : 2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 5.5A • RDSON = 0.40W 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VGS ID Drain–Source Voltage Gate–Source Voltage Drain Cu.

2N6798 : This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Qualified Levels: JAN, JANTX, JANTXV and JANS* Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. • JAN, JANTX, and JANTXV qualifications are a.