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2N6796

Seme LAB
Part Number 2N6796
Manufacturer Seme LAB
Description TMOS FET TRANSISTOR
Published Mar 22, 2005
Detailed Description 2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5...
Datasheet PDF File 2N6796 PDF File

2N6796
2N6796

Overview
2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .
8 9 (0 .
3 5 ) 9 .
4 0 (0 .
3 7 ) 7 .
7 5 (0 .
3 0 5 ) 8 .
5 1 (0 .
3 3 5 ) TMOS FET TRANSISTOR N – CHANNEL 6 .
1 0 (0 .
2 4 0 ) 6 .
6 0 (0 .
2 6 0 ) 1 2 .
7 0 (0 .
5 0 0 ) m in .
0 .
8 9 m a x .
(0 .
0 3 5 ) 7 .
7 5 (0 .
3 0 5 ) 8 .
5 1 (0 .
3 3 5 ) d ia .
FEATURES 5 .
0 8 (0 .
2 0 0 ) ty p .
• VDSS = 100V 2 .
5 4 (0 .
1 0 0 ) 1 0 .
6 6 (0 .
0 2 6 ) 1 .
1 4 (0 .
0 4 5 ) 0 .
7 1 (0 .
0 2 8 ) 0 .
8 6 (0 .
0 3 4 ) 2 3 • ID = 8A • RDSON = 0.
18Ω 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain–Source Voltage VDGR Drain–Gate Voltage (RGS = 1.
0mΩ) VGS Gate–Source Voltage ID Drain Current Continuous IDM Drain Current Pulsed PD Total Device Dissipation @ TC = 25°C Derate above 25°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient TL Ma...


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