MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
Specified for GSM 1930 – 1990 MHz.
• Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR...