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MRF18030BSR3

Part Number	MRF18030BSR3
Manufacturer	Motorola
Description	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
Published	Feb 15, 2007
Detailed Description	MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF ...
Datasheet	MRF18030BSR3 PDF File

Overview

MOTOROLA www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
Specified for GSM 1930 – 1990 MHz.
• Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power • Excellent Thermal Stability • Available in Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF18030BR3 MRF18030BSR3 GSM/GSM EDGE 1.
93 – 1.
99 GHz, 30 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF18030BR3 CASE 465F–03, STYLE 1 NI–400S MRF18030BSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.
5 83.
3 0.
48 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.
1 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2002 MRF18030BR3 MRF18030BSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc...

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