com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
3.
9+/-0.
3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power
Transistor 520MHz,1W
OUTLINE DRAWING
1.
5+/-0.
1
RD01MUS2 is a MOS FET type
transistor specifically designed for VHF/UHF RF amplifiers applications.
This device have an interal monolithic zener diode from gate to source for ESD protection.
TYPE NAME
0.
8 MIN 2.
5+/-0.
1
FEATURES
•High power gain: Pout0.
8W, Gp14dB @Vdd=7.
2V,f=520MHz •High Efficiency: 65%typ.
•Integrated gate protection diode
1
2
1.
5+/-0.
1
3
1.
5+/-0.
1
0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : m...