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RD01MUS2B

Mitsubishi Electric Semiconductor
Part Number RD01MUS2B
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon MOSFET Power Transistor
Published Nov 5, 2012
Detailed Description < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DR...
Datasheet PDF File RD01MUS2B PDF File

RD01MUS2B
RD01MUS2B

Overview
< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from gate to source for ESD protection.
FEATURES •High power gain and High Efficiency.
Pout 1.
6W Typ, Gp 15dBTyp, 70%Typ 0.
4+/-0.
07 0.
5+/-0.
07 0.
4+/-0.
07 TYPE NAME 0.
8 MIN 2.
5+/-0.
1 4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
1 0.
φ 1.
5+/-0.
1 1 2 1.
5+/-0.
1 3 1.
5+/-0.
1 0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.
2V,f=527MHz •Integrated gate protection diode APPLICATION For output stage...


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