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Freescale Semiconductor Technical Data
Document Number: MRF7S19080H Rev.
0, 1/2007
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 18 dB Drai...