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MRF7S19080HSR3

Part Number	MRF7S19080HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 23, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field...
Datasheet	MRF7S19080HSR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev.
0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 18 dB Drain Efficiency — 32% Device Output Signal PAR — 6.
2 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 38 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 80 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S19080HR3 MRF7S19080HSR3 1930 - 1990 MHz, 24 W AVG.
, 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465- 06, STYLE 1 NI - 780 MRF7S19080HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S19080HSR3 Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.
5, +65 - 6.
0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction t...

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MRF7S19080HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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