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2STW4468
High power
NPN epitaxial planar bipolar
transistor
General features
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High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247
3 2 1
Applications
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Audio power amplifier
Description
The device is a
NPN transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology.
The resulting
transistor shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STW4468 Marking 2STW4468 Pack...