1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the
Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
•ăExtremely Low VF •ăLow Power Loss/High Efficiency •ăLow Stored Charge, Majority Carrier Conduction •ăShipped in plastic bags, 500 per bag •ăAvailable in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to
the part number
•ăPb-Free Package...