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1N5802US

Semtech Corporation

(1N5802US - 1N5806US) Superfast Recovery Diodes Surface Mount

1N5802US/1N5804US/1N5806US www.DataSheet4U.com Superfast Recovery Diodes Surface Mount (US) POWER DISCRETES Descriptio...


Semtech Corporation

1N5802US

File Download Download 1N5802US Datasheet


Description
1N5802US/1N5804US/1N5806US www.DataSheet4U.com Superfast Recovery Diodes Surface Mount (US) POWER DISCRETES Description Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA Features ‹ ‹ ‹ ‹ Very low reverse recovery time Hermetically sealed non-cavity construction Soft, non-snap, off recovery characteristics Very low forward voltage drop These products are qualified to MIL-PRF-19500/477 and are preferred parts as listed in MIL-HDBK-5961. They can be supplied fully released as JANTX and JANTXV versions. Electrical Specifications Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Repetitive Reverse Voltage Average Forward Current (@ 75°C lead length = 0.375') Repetitive Surge Current (@ 55°C lead length = 0.375') Non-Repetitive Surge Current (tp = 8.3mS @ Vr & TJMAX) Storage Temperature Range Average Forward Current Max (pcb mounted: TA = 55°C) Sine wave Square wave (d = 0.5) I2t for fusing (t = 8.3mS) max Forward Voltage Drop max @ TJ = 25°C Reverse Current max @ VWRM, TJ = 25°C @ VWRM, TJ = 100°C Reverse Recovery Time max (1.0A IF to 1.0A IRM recover to 0.25A IRM(REC)) Junction Capacitance typ @ VR = 5V f = 1MHz Thermal Resistance to end cap VRWM VRRM IF(AV) IFRM IFSM TSTG 1N 5802U S 50 50 1N 5804U S 100 100 2.5 14 35 -65 to +175 1N 5806U S 150 150 Units V V A A A °C IF(AV) IF(AV) I2t VF IR IR trr CJ R θJEC 1.0 1.1 10 0.875 @ 1A A A 2S V 1.0 50...




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