BUL705
High voltage fast-switching
NPN Power
Transistor
General features
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NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive
1 2 3
TO-220
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Internal schematic diagram
Applications
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Electronic ballast for fluorescent lighting...