BUL804
High voltage fast-switching
NPN Power
Transistor
General features
■
NPN Transistor
■ High voltage capability
■ Low spread of dynamic parameters
)■ Minimum lot-to-lot spread for reliable operation t(s■ Very high switching speed uc■ In compliance with the 2002/93/EC European dDirective Pro t(s)Description lete ucThe device is manufactured using high voltage dMulti-Epitaxial Planar technology for high so roswitching speeds and medium voltage capability.
b PIt uses a Cellular Emitter structure with planar - O teedge termination to enhance switching speeds ) lewhile maintaining the wide RBSOA.
t(s oThe device is designed for use as PFC in high c bsfrequency ballast half Bridge voltage ...