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BUL810

Part Number	BUL810
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 24, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL810 DESCRIPTION ·High Voltage Cap...
Datasheet	BUL810 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL810 DESCRIPTION ·High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies.
·Electronic transformer for halogen lamps ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 15 A ICM Collector Current-peak ( tp <5 ms ) 22 A IBB Base Current-Continuous 5A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 10 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction-Case 1.
0 Thermal Resistance,Junction-Ambient 30 ℃/W ℃/W isc Web...

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