BUL805
High voltage fast-switching
NPN Power
Transistor
Preliminary Data
General features
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NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive
TO-220
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Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology.
Internal schematic diagram
Application...