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MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6282/D
Darlington Complementary Silicon Power
Transistors
.
.
.
designed for general–purpose amplifier and low–frequency switching applications.
• High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285 VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286 VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors *MAXIMUM RATINGS
Rating
2N6282 thru 2N6284 * 2N6285 thru 2N6287 *
PNP
NPN
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