Part Number
|
M58LR128HB |
Manufacturer
|
ST Microelectronics |
Description
|
(M58LR128Hx) Flash memories |
Published
|
Apr 5, 2007 |
Detailed Description
|
com
M58LR128HT M58LR128HB
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply ...
|
Datasheet
|
M58LR128HB
|
Overview
com
M58LR128HT M58LR128HB
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.
8 V supply Flash memories
Features
■
Supply voltage – VDD = 1.
7 V to 2.
0 V for program, erase and read – VDDQ = 1.
7 V to 2.
0 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz – Asynchronous Page Read mode – Random access: 85 ns Synchronous Burst Read Suspend Programming time – 2.
5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8 Mbit banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in o...
Similar Datasheet