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M58LR128GT

STMicroelectronics
Part Number M58LR128GT
Manufacturer STMicroelectronics
Description 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
Published Apr 24, 2010
Detailed Description www.DataSheet4U.com M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memor...
Datasheet PDF File M58LR128GT PDF File

M58LR128GT
M58LR128GT



Overview
www.
DataSheet4U.
com M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.
8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.
7V to 2.
0V for program, erase and read – VDDQ = 1.
7V to 2.
0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations BLOCK LOCKING – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK Figure 1.
Package FBGA VFBGA56 (ZB) 7.
7 x 9mm ■ ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58LR128GT: 88C4h.
– Bottom Device Code, M58LR128GB: 88C5h.
PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions June 2005 1/84 www.
DataSheet4U.
com M58LR128GT, M58LR128GB TABLE OF CONTENTS FEATURES SUMMARY .
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1 Figure 1.
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1 SUMMARY DESCRIPTION .
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7 Figure 2.
Table 1.
Figure 3.
Table 2.
Figure 4.
Logic Diagram .
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