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SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352WT1/D
Dual
Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.
0 pF @ Zero Volts • Low Forward Voltage — 0.
5 Volts (Typ) @ IF = 10 mA
MMBD352WT1
3 1 2
1 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Symbol VR Value 7.
0 Unit VCC
3 CATHODE/ANODE
2 CATHODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrat...