Part Number
|
NAND04GW3C2A |
Manufacturer
|
ST Microelectronics |
Description
|
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory |
Published
|
Apr 10, 2007 |
Detailed Description
|
com
NAND04GA3C2A NAND04GW3C2A
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
Features
■
High...
|
Datasheet
|
NAND04GW3C2A
|
Overview
com
NAND04GA3C2A NAND04GW3C2A
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
Features
■
High density multi-level Cell (MLC) NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications NAND interface – x8 bus width – Multiplexed Address/ Data Supply voltages – VDD = 2.
7 to 3.
6V core supply voltage for Program, Erase and Read operations.
– VDDQ = 1.
7 to 1.
95 or 2.
7 to 3.
6V for I/O buffers.
Page size: (2048 + 64 spare) Bytes Block size: (256K + 8K spare) Bytes Page Read/Program – Random access: 60µs (max) – Sequential access: 60ns(min) – Page Program Operation time: 800µs (typ) Cache Read mode – Internal Cache Register to...
Similar Datasheet