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NAND04GW3C2A

ST Microelectronics
Part Number NAND04GW3C2A
Manufacturer ST Microelectronics
Description (NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory
Published Apr 10, 2007
Detailed Description www.DataSheet4U.com NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features ■ High...
Datasheet PDF File NAND04GW3C2A PDF File

NAND04GW3C2A
NAND04GW3C2A

Overview
www.
DataSheet4U.
com NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features ■ High density multi-level Cell (MLC) NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications NAND interface – x8 bus width – Multiplexed Address/ Data Supply voltages – VDD = 2.
7 to 3.
6V core supply voltage for Program, Erase and Read operations.
– VDDQ = 1.
7 to 1.
95 or 2.
7 to 3.
6V for I/O buffers.
Page size: (2048 + 64 spare) Bytes Block size: (256K + 8K spare) Bytes Page Read/Program – Random access: 60µs (max) – Sequential access: 60ns(min) – Page Program Operation time: 800µs (typ) Cache Read mode – Internal Cache Register to improve the read throughput Fast Block Erase – Block erase time: 1.
5ms (typ) Status Register Electronic Signature Serial Number option Product List Reference NAND04Gx3C2A NAND04GW3C2A Part Number NAND04GA3C2A 4 Gbits Density ■ ■ ■ TSOP48 12 x 20mm ■ Chip Enable ‘don’t care’ – for simple interfa...


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