BU508AFI

BU508AF : High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 34 1.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN C.

BU508AF : BU508AF BU508AF TV Horizontal Output Applications 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 700 5 5 15 60 150 - 65 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) BVEBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter * Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage C.

BU508AF : The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage. Order codes Part Number BU508AF Marking BU508AF Package ISOWATT218FX Packaging Tube March 2007 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings BU508AF 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB PTOT Vins Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Colle.

BU508AF : Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter.

BU508AF : Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter.

BU508AF : ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 34 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Tran.

BU508AF : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperatur.

BU508AFI : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature.

BU508AFI : The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 1 2 TO-3 TO-218 33 22 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp 5 ms) Ptot Vi so l Tstg Tj Total Dissipation at Tc = 25 oC Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max. Operating Junction Temperature .

BU508AFI : ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 50 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction c.