UTC 2SA1300
PNP EPITAXIAL SILICON
TRANSISTOR
SILICON
PNP EPITAXAL TYPE DESCRIPTION
*Strobo Flash Applications.
*Medium Power Amplifier Applications.
FEATURES
*High DC Current Gain and Excellent hFE Linearity.
*hFE(1)=140-600, (VCE= -1V,IC= -0.
5A) *hFE(2)=60(Min.
),120(Typ.
),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.
5V(Max.
), (IC= -2A,IE= -50mA)
1
SOT-89
1: Emitter 2: Collector 3:Base
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulsed (Note)
com
SYMBOL
VCBO VCES VCEO VEBO Ic lcP IB Pc Tj Tstg
RATIOS
-20 -20 -10 -6 -2 -5 -2 750 150 -55~150
UNIT
V V V A A mW °C °C...