UTC 2SD1060
NPN EPITAXIAL PLANAR
TRANSISTOR
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
FEATURE
*Low collector-to-emitter saturation voltage: VCE(sat)=0.
4V max/IC=3A, IB=0.
3A
1
APPLICATIONS
*Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO com VEBO IC ICP PC Tj TSTG
VALUE
60 50 6 5 9 1 150 -55 ~ +150
UNIT
V V V A A W °C °C
ELECTRICAL C...