UNISONIC TECHNOLOGIES CO.
, LTD
2SD879
NPN EPITAXIAL SILICON
TRANSISTOR
1.
5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a
NPN epitaxial silicon
transistor, designed for 1.
5V and 3V strobe applications.
FEATURES
* In applications where two NiCd batteries are used to provide 2.
4V, two 2SD879s are used.
* The charge time is approximately 1 second faster than that of germanium
transistors.
* Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted.
* Large current capacity and highly resistant to break-down.
* Excellent linearity of hFE in the region from low current to high
current.
ORDERING INFORMATION
Ord...