|
Part Number
|
FDC638APZ |
|
Manufacturer
|
Fairchild Semiconductor |
|
Description
|
N-Channel MOSFET |
|
Published
|
May 3, 2007 |
|
Detailed Description
|
FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET
December 2006
FDC638APZ
P-Channel 2.5V PowerTrench® Specified ...
|
|
Datasheet
|
FDC638APZ
|
Overview
FDC638APZ P-Channel 2.
5V PowerTrench® Specified MOSFET
December 2006
FDC638APZ
P-Channel 2.
5V PowerTrench® Specified MOSFET
–20V, –4.
5A, 43mΩ Features
Max rDS(on) = 43mΩ at VGS = –4.
5V, ID = –4.
5A Max rDS(on) = 68mΩ at VGS = –2.
5V, ID = –3.
8A Low gate charge (8nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package:small footprint (72% smaller than standard SO–8) low profile (1mm thick).
RoHS Compliant
General Description
This P-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for...
Similar Datasheet