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FDC638APZ

ON Semiconductor
Part Number FDC638APZ
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 12, 2021
Detailed Description MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 43 mW FDC638APZ General Description This P−Channel 2.5 ...
Datasheet PDF File FDC638APZ PDF File

FDC638APZ
FDC638APZ

Overview
MOSFET – P-Channel, 2.
5 V Specified, POWERTRENCH) -20 V, -4.
5 A, 43 mW FDC638APZ General Description This P−Channel 2.
5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features • Max rDS(on) = 43 mW at VGS = −4.
5 V, ID = −4.
5 A • Max rDS(on) = 68 mW at VGS = −2.
5 V, ID = −3.
8 A • Low Gate Charge (8 nC typical) • High Performance Trench Technology for Extremely Low rDS(on) • SUPERSOTt...


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