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Part Number
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FDMC8554 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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N-Channel Power Trench MOSFET |
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Published
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May 3, 2007 |
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Detailed Description
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FDMC8554 N-Channel PowerTrench® MOSFET
February 2007
FDMC8554 N-Channel Power Trench® MOSFET
20V, 16.5A, 5mΩ Features ...
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Datasheet
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FDMC8554
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Overview
FDMC8554 N-Channel PowerTrench® MOSFET
February 2007
FDMC8554 N-Channel Power Trench® MOSFET
20V, 16.
5A, 5mΩ Features General Description
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.
5A Max rDS(on) = 6.
4mΩ at VGS = 4.
5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.
3x3.
3 mm RoHS Compliant
tm
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for switching performance and ultra low rdson.
Application
Synchronous rectifier ORing FET POL rectifier
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MOSFET Maximum Ratings TA = 25°C unle...
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