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FDMC8588

ON Semiconductor
Part Number FDMC8588
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 19, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 25 V, 40 A, 5.7 mW FDMC8588 General Description This N−Channel MOSFET has been designed...
Datasheet PDF File FDMC8588 PDF File

FDMC8588
FDMC8588

Overview
MOSFET – N-Channel, POWERTRENCH) 25 V, 40 A, 5.
7 mW FDMC8588 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features • Max rDS(on) = 5.
7 mW at VGS = 4.
5 V, ID = 16.
5 A • State−of−the−art Switching Performance • Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency • Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • High Side Switching for High End Computing • High Power Density DC−DC Synchronous Buck Converter DATA SHEET www.
onsemi.
com VDS 25 V rDS(on) MAX 5.
7 mW @ 4.
5 V ID MAX 40 A Pin 1 S S S G DD DD Top Bottom PQFN8 3.
3X3.
3, 0.
65P (Power 33) CASE 483AK MARKING DIAGRAM &Z&3&K 08OD &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digits Lot Run Traceability Code 08OD = Device Code PIN ASSIGNMENT S1 S2 S3 G4 8D 7D 6D 5D ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012 1 June, 2023 − Rev.
4 Publication Order Number: FDMC8588/D FDMC8588 MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Package Limited) TC = 25°C − Continuous (Silicon Limited) TC = 25°C − Continuous (Note 5) 25 V (Note 4) ±12 V 40 A 59 (Note 1a) 16.
5 − Pulsed 60 EAS Single Pulse Avalanche Energy (Note 3) 29 mJ PD Power Dissipation TC = 25°C 26 W Power Dissipation TA = 25°C (Note 1a) 2.
4 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses ...


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