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Part Number
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FDS8812NZ |
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Manufacturer
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Fairchild Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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May 4, 2007 |
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Detailed Description
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FDS8812NZ N-Channel PowerTrench® MOSFET
March 2007
FDS8812NZ
N-Channel
30V, 20A, 4.0mΩ Features
PowerTrench®
tm
MOS...
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Datasheet
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FDS8812NZ
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Overview
FDS8812NZ N-Channel PowerTrench® MOSFET
March 2007
FDS8812NZ
N-Channel
30V, 20A, 4.
0mΩ Features
PowerTrench®
tm
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Max rDS(on) = 4.
0mΩ at VGS = 10V, ID = 20A Max rDS(on) = 4.
9mΩ at VGS = 4.
5V, ID =18A HBM ESD protection level of 6.
4kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability ...
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