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FDS8812NZ

Fairchild Semiconductor
Part Number FDS8812NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FDS8812NZ N-Channel PowerTrench® MOSFET March 2007 FDS8812NZ N-Channel 30V, 20A, 4.0mΩ Features PowerTrench® tm MOS...
Datasheet PDF File FDS8812NZ PDF File

FDS8812NZ
FDS8812NZ

Overview
FDS8812NZ N-Channel PowerTrench® MOSFET March 2007 FDS8812NZ N-Channel 30V, 20A, 4.
0mΩ Features PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
„ Max rDS(on) = 4.
0mΩ at VGS = 10V, ID = 20A „ Max rDS(on) = 4.
9mΩ at VGS = 4.
5V, ID =18A „ HBM ESD protection level of 6.
4kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D G S S Pin 1 S www.
DataSheet4U.
com D D D D G S S S SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Powe...


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