FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
December 2006
FRFET
FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
Features
• 10A, 500V, RDS(on) = 0.
61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well...