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FQP10N50CF

Fairchild Semiconductor
Part Number FQP10N50CF
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Feat...
Datasheet PDF File FQP10N50CF PDF File

FQP10N50CF
FQP10N50CF

Overview
FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features • 10A, 500V, RDS(on) = 0.
61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D G G DS TO-220 FQP Series GD S www.
DataSheet4U.
com TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 2) (Note 1) (Note 1) (Note 3) Parameter FQP10N50CF 10 6.
35 (Note 1) FQPF10N50CF 500 10* 6.
35* 40* ± 30 388 10 14.
3 4.
5 Unit V A A A V mJ A mJ V/ns - Pulsed 40 143 1.
14 -55 to +150 300 48 0.
38 W W/°C °C °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQP10N50CF 0.
87 62.
5 FQPF10N50CF 2.
58 62.
5 Unit °C/W °C/W © 2006 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FQP10N50CF / FQPF10N50CF Rev.
A FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Package Marking and Ordering Informa...


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