Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
CEM3259
5
FEATURES
30V, 7.
6A, RDS(ON) = 22mΩ @VGS = 10V.
RDS(ON) = 32mΩ @VGS = 4.
5V.
-30V, -5.
9A, RDS(ON) = 36mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
D1 8 D1 7 D2 6 D2 5
1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C
±20
7.
6 30 2.
0 -55 to 150
±20
-5.
9 ...