DatasheetsPDF.com

CEM3259

CET
Part Number CEM3259
Manufacturer CET
Description Dual Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM3259 5 FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10...
Datasheet PDF File CEM3259 PDF File

CEM3259
CEM3259

Overview
Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM3259 5 FEATURES 30V, 7.
6A, RDS(ON) = 22mΩ @VGS = 10V.
RDS(ON) = 32mΩ @VGS = 4.
5V.
-30V, -5.
9A, RDS(ON) = 36mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 D1 8 D1 7 D2 6 D2 5 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7.
6 30 2.
0 -55 to 150 ±20 -5.
9 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)