CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
650V, 0.
9A, RDS(ON) = 15 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 650
Units V V A A W W/ C mJ A C
±30
0.
9 3.
6 31 0.
25 60 0.
8 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanc...