DatasheetsPDF.com

CED01N6G

Chino-Excel Technology
Part Number CED01N6G
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current ...
Datasheet PDF File CED01N6G PDF File

CED01N6G
CED01N6G

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.
3Ω @VGS = 10V.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED01N6G/CEU01N6G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 600 Units V V A A W W/ C C ±30 1 4 31 0.
25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Symbol RθJC RθJA Limit 3.
5 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)