CED2182/CEU2182
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
20V, 42A, RDS(ON) = 18mΩ @VGS = 4.
5V.
RDS(ON) = 25mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
D G S CEU SERIES TO-252(D-PAK)
G D
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20
Units V V A A W W/ C C
±12
42 170 50 0.
33 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Sto...