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CED21A3

CET
Part Number CED21A3
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CED21A3/CEU21A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON...
Datasheet PDF File CED21A3 PDF File

CED21A3
CED21A3

Overview
CED21A3/CEU21A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 45mΩ @VGS = 10V.
RDS(ON) = 70mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 20 45 38 0.
25 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4.
0 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice .
6 - 42 Rev 2.
2006.
Nov http://www.
cetsemi.
com CED21A3/CEU...


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