Product Description
Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.
The HFET technology improves breakdown voltage while minimizing
Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA.
The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements.
It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.
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