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SHF-0186K

ETC
Part Number SHF-0186K
Manufacturer ETC
Description DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET
Published Apr 8, 2005
Detailed Description Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure...
Datasheet PDF File SHF-0186K PDF File

SHF-0186K
SHF-0186K

Overview
Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.
HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements.
It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.
Gain vs.
Frequency SHF-0186K DC-3 GHz, 0.
5 Watt AlGaAs/GaAs HFET Product Features • Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Intercept Point Saturated Drain Current VDS = 3V, VGS = 0V Transconductance VDS = 3V, VGS = 0V Pinch-Off Voltage VDS = 3V, IDQ = 1mA Gate-to-Source Breakdown Voltage, Igs = 1.
2mA Gate-to-Drain Breakdown Voltage, Igd = 1.
2mA Thermal Resistance (junction to lead) Gmax S21 • +28 dBm P1dB Typical • +40 dBm Output IP3 Typical • High Drain Efficiency: Up to 46% at Class AB • 17 dB Gain at 900 MHz (Application circuit) • 15 dB Gain at 1900 MHz (Application circuit) Applications • Analog and Digital Wireless System • Cellular PCS, CDPD, Wireless Data, Pagers • AN-020 Contains detailed application circuits Units Min.
Typ.
23.
4 20.
1 13.
7 18.
0 15.
2 17.
9 14.
6 28.
0 28.
8 40.
9 40.
4 300 175 -2.
7 -1.
9 -20 -20 66 -1.
0 -17 -17 Max.
Symbol GMAX S 21 S 21 P 1dB OIP3 IDSS gm VP V bgs V bgd Rth f = 900 MHz, ZS=ZS*, ZL=ZL* f = 1960 MHz, ZS=ZS*, ZL=ZL* f = 900 MHz, ZS=ZL= 50 Ohms f = 1960 MHz, ZS=ZL= 50 Ohms f = 900 MHz, ...


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