F-38
01/99
NJ450L Process
Silicon Junction Field-Effect
Transistor
¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S-D
G
Devices in this Databook based on the NJ450L Process.
Datasheet
2N6550 IF4500 IF4501 IFN860
G
Die Size = 0.
028" X 0.
028" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
S-D
com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Elec...