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NJ450

Part Number	NJ450
Manufacturer	InterFET
Description	Silicon Junction Field-Effect Transistor
Published	May 11, 2007
Detailed Description	F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier...
Datasheet	NJ450 PDF File

Overview

F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G Devices in this Databook based on the NJ450 Process.
Datasheet 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A G Die Size = 0.
028" X 0.
028" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
S-D www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical ...

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