Part Number
|
SPM6G150-060D |
Manufacturer
|
Sensitron |
Description
|
Three-Phase IGBT BRIDGE |
Published
|
May 11, 2007 |
Detailed Description
|
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4113, REV A
SPM6G150-060D
Three-Phase IGBT BRIDGE, With Gate Driver a...
|
Datasheet
|
SPM6G150-060D
|
Overview
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4113, REV A
SPM6G150-060D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current
com
BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES
O
600
-
-
V
IC
-
-
150 130
A
-
-
250 +/-20 +/- 100
A V nA
V...
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